How to analyze each leakage current(in MOSFET) using HSPICE?

For example,  

.print i1(nmos)        <- I(drain)
.print lx5(nmos)      <- I(souce-bulk)

But, I don't know how to simulate each leakage current as below,

sub-threshold leakage,  
Source/Drain Junction Band-to-Band Tunneling leakage,  
gate-leakage,  
gate-induced drain leakage.

please let me know...

Thanks in advance.

iPierre.