How to analyze each leakage current(in MOSFET) using HSPICE?
For example,
.print i1(nmos) <- I(drain)
.print lx5(nmos) <- I(souce-bulk)
But, I don't know how to simulate each leakage current as below,
sub-threshold leakage,
Source/Drain Junction Band-to-Band Tunneling leakage,
gate-leakage,
gate-induced drain leakage.
please let me know...
Thanks in advance.
iPierre.