Hi Berti,
If the foundry offers devices in deep nwell, then it should normally also offer you models based on characterisation
of such devices. Depending on the foundry, there may be some/a lot of differences between these devices (isolated)
and standard nonisolated devices in a pwell process. Typically, I would expect that atleast the basic operation is
quite similar.
Which process is it by the way? Perhaps if someone else is using this process, they could tell you whether the models
are obtained from a characterisation of nwell devices or not.
Regards
Vivek
Berti wrote on Feb 7th, 2008, 12:10am:Hi all,
The technology I use offers deep (or buried) nwells. I am wondering whether the deep nwell will change the characteristics of the devices?
Because I assume that the transistor models haven't been measured for devices isolated by a deep-nwell(?) What difference can I expect
for transistors isolated by a deep nwell ... or can I neglect the influence.?.
Thanks for inputs!