Geoffrey_Coram wrote on Feb 22nd, 2008, 6:43am:I would think the poly gate and substrate doping levels are going to be different. Particularly on the poly gate, there's a poly depletion effect that could change the effective "d" in the eps A / d formula for capacitance.
Hi Geoffrey,
Would this also lead to the "buried channel" effect in 1/f noise? The channel must be significantly below the surface
to cause a visible change in "d". I would imagine that 1/f noise drops a lot. What do you think?
Berti: Does your PMOS have much less noise in output current for a given DC current at a given size compared to the NMOS?
Regards
Vivek