Hi all,
I am currently working on some Barium Strontium Titanate and Aluminum Oxide thin films having n-Silicon substrate as the substrate. I have done a voltage sweep from +20V to -20V on the devices with the frequency constant for each sweep. The frequencies that I used are 1 kHz, 1 MHz and 10 MHz. Can anyone tell me how to find out the behavior of the devices in general from the values obtained from the voltage sweep.

Thanks in Advance.
Bhavi