cmos.analogvala
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Posts: 65
India
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Yes same bias voltage in both the case VGS=VDS=Vdd/2 ...The transistor is biased in saturation region ...I found it in 180nm and 90nm technologies .. I am using foundry specified model files ..
by fast i mean dc drain current increases ...i have not looked at transient results ..
The point is that it is well known that mobility degrades with temperature ..but |vt| decreases with temperature .. mobility coefficient is T^(3/2) hence mobility degrades much rapidly that |vt | decrease ..... but the results are DSm technologies are astonishing ..
Any Clue ?
-CA
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