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threshold voltage of MOSFET / own well (Read 2635 times)
ontheverge
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threshold voltage of MOSFET / own well
Sep 28th, 2010, 2:31pm
 
Hi,

Placing MOSFETs in their own well is effective in eliminating body effect. my quesiton is, is this method widely used in practical? or it's just for simplifying the design?


thanks,
Stephen
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raja.cedt
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Re: threshold voltage of MOSFET / own well
Reply #1 - Sep 28th, 2010, 9:53pm
 
hi,
many times people prefer transistor in separate well but mainly to isolate from the substrate noise due high digital stuff and this is so called deep N-well process.

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Lex
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Re: threshold voltage of MOSFET / own well
Reply #2 - Sep 29th, 2010, 1:45am
 
Depends on the foundry as well. If their spacing rules are very high, you make seperate wells only when you think it is really necessary (noise from supplies or other analog req.). When the spacing rules are less tight, the area penalty is smaller, so you might apply it to less critical blocks as well.
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vivkr
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Re: threshold voltage of MOSFET / own well
Reply #3 - Sep 29th, 2010, 2:32am
 
ontheverge wrote on Sep 28th, 2010, 2:31pm:
Hi,

Placing MOSFETs in their own well is effective in eliminating body effect. my quesiton is, is this method widely used in practical? or it's just for simplifying the design?


thanks,
Stephen


Depending on your process technology, this option may actually be very attractive in some cases, and sometimes even necessary. There are many reasons for tying bulk-source, some of which are:

1. Reduced body effect
2. As a result of 1, you may have better headroom and mismatch
3. Avoiding overvoltage condition in charge-pumps (voltage boosters).
4. Higher output impedance in cascoded mirrors or gain-boosted amps.

The most common situation where this is needed and usually supported by the foundry is for high-voltage design. Eliminating body effect may be desirable for a designer but body effect by itself is seldom a killer. Overvoltage on the other hand is a killer.

Vivek
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