Thank you Geoffrey.
Is there a standard that is followed in calculating Vt from Id?
I recall mention of 300mA but I am not sure what it refers to. I guess the device gets biased to produce Id=300mA and Vt is calculated based on a simple expression for Id as a function of mu, cox, W, L, Vgs, Vds and Vt
I suspect one would get different Vt values using this approach at different values of Vgs and Vds (clearly Vt is a function of bias, otherwise there would not be different values for Vtlin and Vtsat)
What am I missing here?
Thanks.