anas.iftikhar
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Pakistan
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Hi, I am modelling dark current of photo-diode in VerliogAMS and going through this book Optical Semiconductor Devices by Mitsuo Fukuda. Here, the dependence of dark current is discussed such as Diffusion Current, Generation-Recombination etc. There are two major device parameters knows as Trap Density and Carrier Capture Cross-Section are discussed along with the mathematical expressions. I need few test values of these parameters so I could model the dark current. If someone has more literature on these parameters for photo-diode please share. I have shared snap shots of those pages where these parameters are discussed.
Thank you.
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