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Dark Current modeling of Photodiode (Read 3746 times)
anas.iftikhar
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Dark Current modeling of Photodiode
Mar 03rd, 2015, 8:25am
 
Hi,
I am modelling dark current of photo-diode in VerliogAMS and going through this book Optical Semiconductor Devices by Mitsuo Fukuda. Here, the dependence of dark current is discussed such as Diffusion Current, Generation-Recombination etc. There are two major device parameters knows as Trap Density and Carrier Capture Cross-Section are discussed along with the mathematical expressions.
I need few test values of these parameters so I could model the dark current. If someone has more literature on these parameters for photo-diode please share.
I have shared snap shots of those pages where these parameters are discussed.

Thank you.
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Geoffrey_Coram
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Re: Dark Current modeling of Photodiode
Reply #1 - Mar 19th, 2015, 6:45am
 
Did you try a search at IEEExplore for "dark current" ?  (Do you have access to IEEE publications?)
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anas.iftikhar
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Re: Dark Current modeling of Photodiode
Reply #2 - Apr 5th, 2015, 2:54am
 
No I don't have access to them. Can someone please share any literature regarding these parameters?
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Geoffrey_Coram
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Re: Dark Current modeling of Photodiode
Reply #3 - Apr 28th, 2015, 6:13pm
 
It's against IEEE's terms of use to share that information with you.

You can try a Google Scholar search; sometimes the authors have posted the article on their own web site.
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