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May 23rd, 2019, 12:33pm
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Paper showing evolution of intrinsic gain vs. min. channel length? (Read 422 times)
spectrallypure
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Paper showing evolution of intrinsic gain vs. min. channel length?
Dec 17th, 2018, 4:12am
 
Hi! Does anybody know of any recent paper/book showing the evolution of transistor intrinsic gain (gm*ro) with minimum channel length (=technology node)?

So far I've only found the graph below [1], but I'm looking for other references showing the same trend (i.e. that things get better in 22nm and below (FinFETs)).

Thanks in advance for any help!

[1] Holt, "Moore’s Law: A Path Going Forward", ISSCC'16

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intrinsic_gain_vs_Lmin.jpg
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DanielLam
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Re: Paper showing evolution of intrinsic gain vs. min. channel length?
Reply #1 - Dec 17th, 2018, 1:09pm
 
That gmro increase is due to a higher gm and higher ro of the finfet devices.

I think you should look at the ft of the devices as well. Finfets tend to have more gate capacitance than the bulk devices. So, while the gmro tends to be higher, the transition frequency (ft) might be worse.
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vroy_92
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Re: Paper showing evolution of intrinsic gain vs. min. channel length?
Reply #2 - Dec 29th, 2018, 4:15pm
 
A more important parameter would be fmax. fT is more like a parameter technologists use, the real story is told by the fmax.
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Regards,
V Roy
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