analogic
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In Razavi's "design of analog IC" book P37, it is claimed that "for given dimensions and bias currents, NMOS transistors exhibit a higher output resistance, providing more ideal current sources and higher gain in amplifiers".
However, i simulated a NMOS and a PMOS, both biased in saturation region with same Ids and similar Vds, same W and L. gds of PMOS is smaller than NMOS, which means NMOS has lower output resistance.
Can anyone tell me why my simulation is different from the book's conclusion? i was using tsmc0.18CMOS
thanks.
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