Maks
Community Member
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Posts: 52
San Jose
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If you are simulating a diode, you can get a very accurate result from solving only Poisson equation if you are simulating a reverse bias condition (assuming you are not interested in reverse current simulation - which can never be trusted unless you do a thorough lifetime model calibration). You will get a zero current, and an accurate description of depletion effect.
In general if you do not solve electron and hole continuity (i.e. current transport) equations, you are (implicitly) assuming constant (coordinate-independent) quasi-Fermi potentials for electrons and holes, which means the conduction current is zero (both for electrons and holes). So, I guess that solving Poisson equation may be sufficient to simulate this sort of condition - reverse-biased p-n junction, MOS structure (C-V characteristics), structures with no electrons or holes, etc.
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