Maks
Community Member
Offline
Posts: 48
San Jose

If you are simulating a diode, you can get a very accurate result from solving only Poisson equation if you are simulating a reverse bias condition (assuming you are not interested in reverse current simulation  which can never be trusted unless you do a thorough lifetime model calibration). You will get a zero current, and an accurate description of depletion effect.
In general if you do not solve electron and hole continuity (i.e. current transport) equations, you are (implicitly) assuming constant (coordinateindependent) quasiFermi potentials for electrons and holes, which means the conduction current is zero (both for electrons and holes). So, I guess that solving Poisson equation may be sufficient to simulate this sort of condition  reversebiased pn junction, MOS structure (CV characteristics), structures with no electrons or holes, etc.
