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Jul 20th, 2019, 4:19am
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Question: Regarding Sentaurus TCAD tool

Sdevice module of Sentaurus  
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« Created by: Ria on: Jul 21st, 2016, 10:05am »

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Any TCAD users here (device simulationg question) (Read 8442 times)
esprit
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Any TCAD users here (device simulationg question)
Oct 9th, 2009, 11:15am
 

I'm running 2D Sentaurus device simulation and was attempting to do some 3D simulations with some sort of a diode setup.

Now, running 3D (and sometimes 2D) simulations using Poisson coupled with one or two continuity equations (electron and/or hole) takes a very long time.  I was wondering if solving only Poisson equation will give me a good picture of how the outcome should look like.  In other words, under what conditions solving Poisson equation only can be trusted?

Thanks,
Esprit
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Maks
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Re: Any TCAD users here (device simulationg question)
Reply #1 - Oct 23rd, 2009, 7:20pm
 
If you are simulating a diode, you can get a very accurate result from solving only Poisson equation if you are simulating a reverse bias condition (assuming you are not interested in reverse current simulation - which can never be trusted unless you do a thorough lifetime model calibration). You will get a zero current, and an accurate description of depletion effect.

In general if you do not solve electron and hole continuity (i.e. current transport) equations, you are (implicitly) assuming constant (coordinate-independent) quasi-Fermi potentials for electrons and holes, which means the conduction current is zero (both for electrons and holes). So, I guess that solving Poisson equation may be sufficient to simulate this sort of condition - reverse-biased p-n junction, MOS structure (C-V characteristics), structures with no electrons or holes, etc.
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rokisr
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\ Any TCAD users here (device simulationg question)
Reply #2 - Jul 11th, 2011, 2:39pm
 
Hello,
I am beginner in the Sentaurus TCAD and I am trying to simulation a piece of silicon with traps. And I have a problem: Sentaurus Device shows lack of convergence when traps are included. Even the step size is reduced to 1e-50 it does not converge  :(.
Any help is appreciated.


-Rokis
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nano-sid
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Re: Any TCAD users here (device simulationg question)
Reply #3 - Dec 25th, 2013, 7:35pm
 
i m a beginner in sentaratus tcad .im currently working on Sram . Anybody kindly say me what are the standard sram dimensions need to program that in Tcad
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Ria
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Re: Any TCAD users here (device simulationg question)
Reply #4 - Jul 21st, 2016, 10:05am
 
Hi, I am using Advanced Sentaurus TCAD. I want to check volume inversion occuring in a DGFET. What models should I include in physics section of des.cmd file? or what changes I have to make in parameter file? Can anyone help me?
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