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IBM45nm (SOI ) technology Gate resistance problem (Read 3031 times)
nadroit
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IBM45nm (SOI ) technology Gate resistance problem
Jul 18th, 2011, 9:47am
 
I am using IBM45nm (SOI) technology provided by MOSIS for designing RF circuits. I used cadence 6.1 to carry out some simulations. When I do typical DC simulation and print the oprating points I do not see the value for gate resistance . Why is this happning? is there no gate resistance in SOI technology? (I checked the BSIMSOI manual and they do model gate resistance and ther RF parameters) I bit confused please help.

Thanks
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Geoffrey_Coram
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Re: IBM45nm (SOI ) technology Gate resistance problem
Reply #1 - Jul 20th, 2011, 6:36am
 
Did you check the documentation for BSIMSOI in your simulator and verify that RG or RGEFF or whatever is in the list of operating point values?
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