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ion implantation for Vth adjustment (Read 2319 times)
analogic
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ion implantation for Vth adjustment
Mar 28th, 2005, 7:23pm
 
it is said in some book that "ion implantation for Vth adjustment" is done after the growth of gate oxide. is it true? will it degrade the quality of the gate oxide? Thanks.
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DReynolds
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Re: ion implantation for Vth adjustment
Reply #1 - Mar 29th, 2005, 7:30am
 
Analogic, ion implantation is done several times in .13um to adjust threshold (among other things). You can get normal vt, low vt and native devices..... no, it doesn't hurt the quality of the gate oxide. If you use the lower vt or native devices, be careful to understand how much they can vary before you commit to using them.


David Reynolds
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